FDV302P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDV302P
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 350 mW -25 V Continuous Drain Current (ID):120 mA 310 pC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -25 V |
| Length | 2.92 mm |
| Width | 1.3 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 13 Ω |
| Height | 930 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -120 mA |
| Max Power Dissipation | 350 mW |
| Power Dissipation | 350 mW |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Input capacitance | 11 pF |
| Continuous Drain Current (ID) | 120 mA |
| Rds On Max | 10 Ω |
| Drain to Source Voltage (Vdss) | -25 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 9 ns |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | -25 V |
| Gate Charge | 310 pC |
| Drain to Source Resistance | 13 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1 V |
| Gate to Source Voltage (Vgs) | -8 V |
| Drain to Source Breakdown Voltage (Vds) | -25 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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